Will we ever have 1nm transistors for cpus?

Let’s make something clear: numbers in front of nm mean nothing!

This is from wiki about 7nm lithography:

Notice how TSMC 7nm transistor gate pitch is identical to Intel’s 10nm!

Also there is absolutely nothing in 7nm dimension range. Notice how Intel “old-fashioned” 10nm tech has smallest metal pitch!

TSMC 5nm is not much better then Intel 10nm!

So, what you mean by 1nm?
Manufacturer BS or real dimension?

I’m not sure will we ever have 1nm physical dimension transistor using current tech. 3nm manufacturer BS is already very problematic. At those levels (5nm and bellow) quantum effects are very problematic. There is a “way around” and is called GAA - gate all around. GAA will be first used by Samsung, then Intel while TSMC still stays on FinFET. Next step will be nano-sheet and nano-wire GAA transistors.

At physical 1nm are enormous problems. Si atoms are 0.2 - 0.3 nm in diameter what means whole transistor will be 3 - 4 atoms what’s impossible cause MOSFET consists of Drain, Source and channel between. So, each will be single atom.

But using manufacturer BS 1nm will have gate pitch of some 25 - 30 nm what is completely different story. But quantum effects…

Besides GAA Intel has working 3D versions where in CMOS gate (N + P MOSFET) N transistor is on top of P one saving almost 50% of space.

Also, high speed transistors are bigger then slow, low power ones. We see how TSMC 5nm hardly reaches 3.3 GHz as well as Intel 10nm has issues with 5 GHz. Btw, reason why L1 cache is way smaller then L3. It will be compromise, power or speed.
For long time CPUs reached max speeds of 5 GHz and there is no improvement for decades. Way around was increase in IPC and a lot of cores.